ÖZGEÇMİŞ VE ESERLER LİSTESİ

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1 ÖZGEÇMİŞ VE ESERLER LİSTESİ ÖZGEÇMİŞ Adı Soyadı: Mustafa Güneş Doğum Tarihi: 11 Mayıs 1981 Öğrenim Durumu: Doktora Derece Bölüm/Program Üniversite Yıl Lisans-I Fizik Dokuz Eylül Üniversitesi 2004 Lisans-II İşletme Anadolu Üniversitesi 2012 Y.Lisans/Doktora/S.Yeterlik/ Bilgisayar ve Tıpta Uzmanlık Elektronik Müh./Fizik Essex Üniversitesi 2010 Yüksek Lisans Tez Başlığı (özeti ekte) ve Tez Danışman(lar)ı: Doktora Tezi/S.Yeterlik Çalışması/Tıpta Uzmanlık Tezi Başlığı (özeti ekte) ve Danışman (lar)ı: Optical and Electronic Properties of Nitrogen Containing III-V Compounds Prof. Dr. N. Balkan Görevler: Görev Unvanı Görev Yeri Yıl Lab.Asist. Essex Üniversitesi, Bilgisayar ve Elektronik Müh. Bölümü Uzman Dr. İstanbul Üniversitesi, Fen Fakültesi, Fizik Bölümü Yrd.Doç.Dr Adana Bilim ve Teknoloji Üniversitesi, Malzeme Müh.Bölümü Bölüm Başkanı Adana BTÜ Malzeme Müh. Bölümü ARGET Adana BTÜ Ar-Ge ve Teknoloji Ofisi Birim Sorumlusu Birim Sorumlusu BAP üyesi Adana BTÜ Bilimsel Araştırmalar Projeler Komisyon Üyesi Erasmus Bölüm Adana BTÜ Erasmus Bölüm Koordinatörü Koordinatörü Yönetilen Yüksek Lisans Tezleri:.. Yönetilen Doktora Tezleri/Sanatta Yeterlik Çalışmaları: Projelerde Yaptığı Görevler:

2 1. Manyeto-fotolüminesans, Shubnikov de-haas, ve Raman Ölçümlerinden III-V-N Yapılardaki Taşıyıcıların Etkin Kütle Tayini, Anadolu Üniversitesi BAP, Proje No: 1001F99, / , Araştırmacı. 2. n-ve p-tipi Modulasyon katkılı Ga 1-x In x N y As 1-y Kuantum Kuyusu Yapılarının Optik Özellikleri ve Elektronik Transport Mekanizmalarının İncelenmesi, 110T874, TBAK. Araştırmacı. 3. İleri Litografik Yöntemler, Kalkınma Bakanlığı, Bilimsel Proje Uzmanı, DPT 2010K121050, / , Araştırmacı. 4. Novel Gain Materials and Devices Based on III-V-N Compounds, MP0805 Cost Action, / Araştırmacı. İdari Görevler: 1. Adana BTÜ Malzeme Müh. Bölümü Bölüm Başkanı, Ar-Ge ve Teknoloji Ofisi Birim Sorumlusu, Erasmus Bölüm Koordinatorü, Adana BTÜ Bilimsel Araştırmalar ve Projeler Birimi Üyesi, Bilimsel Kuruluşlara Üyelikler: Temiz Enerji Vakfı (TEMEV) Üyeliği. ARBİS Ödüller: Dokuz Eylül Üniversitesi, Fizik Bölüm Üçüncülüğü Yurt Dışı Doktora Bursu Son iki yılda verdiği lisans ve lisansüstü düzeydeki dersler (Açılmışsa, yaz döneminde verilen dersler de tabloya ilave edilecektir): Akademik Yıl Dönem Dersin Adı Haftalık Saati Teorik Uygulama Güz Fizik-I 4 2 İlkbahar Fizik-II 4 2 Öğrenci Sayısı ESERLER A. Uluslararası hakemli dergilerde yayımlanan makaleler: A1. M. Gunes, N. Balkan, D. Zanato, W.J.Schaff A comparative study of electrical and optical properties of InN and In 0.48 Ga 0.52 N, Microelectronics Journal, Volume 40, 4-5, , (2009) A2. E. Tiras, M. Gunes,N. Balkan, R. Airey, W.J. Schaff, Superconductivity in MBE grown InN, Appl. Phys. Lett., 94, , (2009) A3. E. Tiras, M. Gunes, N. Balkan, W.J. Schaff In rich In 1-x Ga x N: Composition Dependence of Longitudinal Optical Phonon Energy, Physica Status solidi (b), Volume 247(1) pp , (2010) A4. M. Gunes, N. Balkan, M. Yilmaz, A. Ulug, B. Ulug, W.J. Schaff A study of optical and electrical properties of In-rich In 1-x Ga x N American Institute of Physics Volume 1288, pp , (2010)

3 A5. M. Gunes, N. Balkan, S. Ardali, E. Tiras, A.O. Ajagunna, E. Iliopoulos, A. Georgakilas Superconductivity in MBE grown InN, Physica Status Solidi C, Volume 8, Issue 4, A6. S. Ardali, E. Tiras, M. Gunes, N. Balkan, A.O. Ajagunna, E. Iliopoulos, A. Georgakilas Longitudinal optical phonon energy in InN, Physica Status Solidi C, Volume 8, Issue 4, A7. S.Ardali, E. Tiras, M. Gunes, N. Balkan, A.O. Ajagunna, E. Iliopoulos, A. Georgakilas Determination of dislocation densities in InN, Phys. Stat. Solidi C, Volume 9, Issue 3-4, A8. E. Tiras, N. Balkan, S. Ardali, M. Gunes, C. Fontaine, and A. Arnoult, Quantum lifetimes and momentum relaxation of electrons and holes in Ga 0.7 In 0.3 N As /GaAs Quantum Wells, Philosophical Magazine, Volume 91, Issue 4, pp , A9. F. Chaqmaqchee, M. Oduncuoglu, S. Mazzucato, N. Balkan, Y. Sun, M. Gunes, M. Hugues M, M. Hopkinson, GaInNAs-based HELLISH-Vertical Cavity Semiconductor Optical Amplifier for 1.3μm operation, Nanoscale Research Letters (Springer), 6:104, A10. O. Donmez, M. Gunes, A. Erol, M.C. Arikan and N. Balkan, High carrier concentration induced effects on the bowing parameter and the temperature dependence of the band gap of Ga x In 1-x N, Journal of Applied Physics,110, , A11. O. Donmez, M. Gunes, A. Erol, M.C. Arikan, N. Balkan, W.J. Schaff, The role of dislocation-induced scattering in electronic transport in Ga x In 1-x N alloys, Nanoscale Research Letters, 7:490, (2012) A12. F. Sarcan, O. Donmez, M. Gunes, A Erol, M.C. Arikan, J. Puustinen and M. Guina An analysis of Hall mobility in as-grown and annealed n- and p-type modulation doped GaInNAs/GaAs quantum wells, Nanoscale Research Letter, 7; 529, (2012) A13. F. Nutku, A. Erol, M. Gunes, L.B. Buklu, Y. Ergun, M.C. Arikan I-V Characterization of a Quantum Well Infrared Photodetector with Stepped and Graded Barriers, Superlattices and Microstructures, 52, pp , (2012) A14. N. Balkan, E. Tiras, A. Erol, M. Gunes, S. Ardali, C. Gumus, M.C. Arikan., Acceptor Formation in Mg-Doped Indium Rich Ga x In 1-x N: Evidence for p-type conductivity, Nanoscale Research Letter, 7:574, (2012) A15. F. Sarcan, O. Donmez, A. Erol, M. Gunes, M.C. Arikan, J. Puustinen, M. Guina, Influence of nitrogen on effective hole mass and Hall mobility in p-type modulation doped GaInNAs/GaAs quantum well structures, accepted by Applied Physics Letters, (2013). A16. M. GUNES, Determination of Non-equilibrium Electron Energy and Momentum Relaxation Rates in the Steady State in 2D Semiconductor, submitted to Journal of Optoelectronic and Advanced Material (JOAM), B. Uluslararası bilimsel toplantılarda sunulan ve bildiri kitabında (Proceedings) basılan bildiriler : B1. M. Gunes, N. Balkan, E. Tiras, Electronic transport and optical properties in In 1- xga x N, 33 rd WOCSDICE, pp , İspanya, (2009) B2. B. Royall B, M. Gunes, N. Balkan, Spectral response of GaInNAs/GaAs Multiquantum-Well solar cells, ECIO 2010 Cambridge (15th European Conference on Integrated Optics and Technical Exhibition, Cambridge, İngiltere, (6-9 Nisan 2010)

4 B3. M. Gunes, N. Balkan, D. Zanato W.J.Schaff A comparative study of electrical and optical properties of InN and In 0.48 Ga 0.52 N, ICSNN 2008, Brezilya. B4. M. Gunes, Yun Sun and N. Balkan Determination of Non-equilibrium Electron Energy and Momentum Relaxation Rates in the Steady State in 2D Semiconductors School of Physics and Astronomy, Nottingham,7-9 th of April 2008, İngiltere. B5. M.Gunes, N. Balkan Optical studies of n- modulation doped GaInNAs/GaAs Quantum Wells Cost Summer School, th of May, 2008, Cetraro, İtalya. B6. M. Gunes, N. Balkan, E. Tiras Electronic Transport in Undoped and Mg-doped In 1- xga x N SIOE 2009 (Semiconductor and Integrated Optoelectronic Conference), Cardiff University, 6-8 April 2009), İngiltere. B7. M. Gunes, N. Balkan, E. Tiras Superconductivity in Mg-Doped compensated InN at the scientific kick-off meeting of the COST-MP0805 action. (Novel gain materials and devices based on III-V-N compounds), 24 May 2009, Wivenhoe Hotel, Colchester, İngiltere. B8. M. Gunes, N. Balkan, C. Gumus, A. Erol, M.C. Arikan, M. Yılmaz, B. Ulug Electronic transport in GaInAs/GaAs and dilute nitride GaInNAs/GaAs Quantum Wells: Effect of nitrogen on momentum relaxation of holes, International Commission for Optics Topical Meeting on Emerging Trends & Novel Materials in Photonics, 7-9 October 2009, Delphi, Yunanistan. B9. M.Gunes, N. Balkan, S. Ardali, E. Tiras, W.J. Schaff Superconducting phase transition in highly compensated Mg-doped InN International Commission for Optics Topical Meeting on Emerging Trends & Novel Materials in Photonics, 7-9 October 2009, Delphi, Yunanistan. B10. F. Chaqmaqchee, M. Oduncuoglu, S. Mazzucato, M. Gunes, N. Balkan HELLISH Vertical Cavity Semiconductor Optical Amplifier/Wavelength convertor for 1.3 μm operation International Commission for Optics Topical Meeting on Emerging Trends & Novel Materials in Photonics, 7-9 October 2009, Delphi, Yunanistan. B11. F. Chaqmaqchee, M. Oduncuoglu, S. Mazzucato, M. Gunes, N. Balkan HELLISH Vertical Cavity Semiconductor Optical Amplifier/Wavelength convertor for 1.3 μm operation International Commission for Optics Topical Meeting on Emerging Trends & Novel Materials in Photonics, 7-9 October 2009, Delphi, Yunanistan. B12. F. Chaqmaqchee, M. Oduncuoglu, S. Mazzucato, M. Gunes, N. Balkan, M. Hugues and M. Hopkinson GaInNAs-based HELLISH-Vertical Cavity Semiconductor Optical Amplifier for 1.3μm operation The 16 th International Conference on Superlattices, Nanostructures & Nanodevices (ICSNN-2010) Beijing, Çin. B13. N. Balkan, E. Tiras, A. Erol, M. Gunes, S. Ardali, M. C. Arikan, W. J. Schaff Mg-Doped Indium rich Ga x In 1-x N: Spectral Photoconductivity. E-MRS 2011 SPRING MEETING IUMRS ICAM 2011 & E-MRS / MRS BILATERAL CONFERENCE on ENERGY Technical sessions: May 9-13, 2011, Nice, Fransa. B14. E. Tiras, S. Ardali, M. Gunes, N. Balkan, C. Fontaine, and A. Arnoult Direct determination of electron and hole effective masses in modulation doped dilute nitride quantum wells, COST-MP0805 action. (Novel gain materials and devices based on III-V-N compounds) meeting, April, 2010, Istanbul, Türkiye. B15. F. Chaqmaqchee, M. Oduncuoglu, S. Mazzucato, M. Gunes, A. Boland-Thoms, N. Balkan, M. Hugues and M. Hopkinson GaInNAs-based HELLISH-Vertical Cavity Semiconductor Optical Amplifier for 1.3μm operation, COST-MP0805 action. (Novel gain materials and devices based on III-V-N compounds) meeting, April, 2010, Istanbul, Türkiye. B16. S. Ardali, E. Tiras, M. Gunes, N. Balkan, A. O. Ajagunna, E. Iliopoulos, A. Georgakilas Longitudinal optical phonon energy in InN, EMRS Strasbourg Spring Meeting, Physics and applications of novel gain materials based on III-V-N compounds, June 7-11, 2010, Fransa. B17. M. Gunes, N. Balkan, S. Ardali, E. Tiras, A. O. Ajagunna, E. Iliopoulos, A. Georgakilas Superconductivity in MBE grown InN, EMRS Strasbourg Spring Meeting, Physics and applications of novel gain materials based on III-V-N compounds, June 7-11, 2010, Fransa. B18. B. Royall, M. Gunes, N. Balkan, O. Donmez, H. Basak, A. Erol, M. C. Arikan, J. Puustinen, V-M. Korpijarvi, M. Saarinen, M. Guina Spectral Dependence and the Effect of Trapping in the Performance of GaInNAs/GaAs Multi-Quantum Well Solar Cells at Low

5 Temperatures, EMRS Strasbourg Spring Meeting, Physics and applications of novel gain materials based on III-V-N compounds, June 7-11, 2010, Fransa. B19. Ömer Dönmez, Mustafa Güneş, Ayşe Erol and M. Cetin Arikan Electronic transport in In rich Ga x In 1 x N EMRS Strasbourg Spring Meeting, Physics and applications of novel gain materials based on III-V-N compounds, June 7-11, 2010, Fransa. B20. O. Donmez, M. Yılmaz, M. Gunes, A. Erol, B. Ulug, M. C. Arikan, A. Ulug Optical and electrical properties of In rich Ga x In 1 x N structures EMRS Strasbourg Spring Meeting, Physics and applications of novel gain materials based on III-V-N compounds, June 7-11, 2010, Fransa. B21. Murat Tanisli, Engin Tiras, Naci Balkan, Sukru Ardalı, Mustafa Gunes, Adebowale Olufunso Ajagunna, Eleftherios Iliopoulos, and Alexandros Georgakilas Raman and Infrared Study for Determination of Electron Effective Mass in InN. E-MRS 2011 SPRING MEETING IUMRS ICAM 2011 & E-MRS / MRS BILATERAL CONFERENCE on ENERGY Technical sessions: May 9-13, 2011, Nice, Fransa. B22. Sukru Ardali, Engin Tiras, Naci Balkan, Mustafa Gunes, Adebowale Olufunso Ajagunna, Eleftherios Iliopoulos, and Alexandros Georgakilas Determination of Dislocation Densities in InN E-MRS 2011 SPRING MEETING IUMRS ICAM 2011 & E-MRS / MRS BILATERAL CONFERENCE on ENERGY Technical sessions: May 9-13, 2011, Nice, Fransa. B23. N. Balkan, E. Tiras, A. Erol, M. Gunes, S. Ardali, M. C. Arikan, W. J. Schaff Mg-Doped Indium rich Ga x In 1-x N: Spectral Photoconductivity. EMRS Strasbourg Spring Meeting, Physics and applications of novel gain materials based on III-V-N compounds, June 7-11, 2010, Fransa. B24. M. Gunes, O. Donmez, M. Yilmaz, A. Erol, M. C. Arikan, B. Ulug, A. Ulug, N. Balkan, A. O. Ajagunna, E. Iliopoulos, A. Georgakilas:, Optical and electrical properties of nonintentionally doped InN/GaN and GaN/InN/GaN heterostructures, 13 th International Conference on Transport Optical Networks ICTON 2011, Haziran, Stockholm, İsveç. B25. A. Erol, M. Gunes, F. Sarcan, M. C. Arikan, J. Puustinen, M. Guina, Electronic transport properties of the GaInNAs/GaAs p-type as-grown and annealed modulation doped quantum well, structures, 13 th International Conference on Transport Optical Networks ICTON 2011, Haziran, Stockholm, İsveç. B26. F. Sarcan, O. Donmez, M. Gunes, A. Erol, M. C. Arikan, J. Puustinen, M. Guina, Effects of thermal annealing on optical and electronic properties in n- and p-type Modulation Doped GaInNAs/GaAs Quantum Wells, Physics and Applications of Novel gain materials based on Nitrogen and Bismuth Containing III-V Compounds of the E-MRS 2012 Spring Meeting, Strasbourg (France) Mayıs, B27. M. Gunes, A. Erol, F. Sarcan, O. Donmez, M. C. Arikan, J. Puustinen, M. Guina, A comparative study on electronic transport properties of n-and p- modulation doped GaInAs/GaAs and dilute nitride Ga 0.68 In 0.32 N 0.17 As 0.83 /GaAs Quantum Well, Physics and Applications of Novel gain materials based on Nitrogen and Bismuth Containing III-V Compounds of the E-MRS 2012 Spring Meeting, Strasbourg (Fransa),14-18 Mayıs, B28. O. Donmez, M. Gunes, A. Erol, M.C. Arikan, N. Balkan, W. J. Schaff, The role of dislocation-induced scattering in electronic transport in Ga x In 1-x N alloys International Conference on Superlattices, Nanostructures, and Nanodevices, Dresden, Almanya, Temmuz, B29. N. Balkan, E. Tiras, A. Erol, M. Gunes, S. Ardali, C. Gumus, M. C. Arikan Acceptor Formation in Mg-Doped Indium Rich Ga x In 1-x N: Evidence for p-type conductivity, International Conference on Superlattices, Nanostructures, and Nanodevices, Dresden, Almanya, Temmuz, B30. Fahrettin SARCAN, Omer DONMEZ, Mustafa GUNES, Ayse EROL, Mehmet Cetin ARIKAN, Janne PUUSTINEN and Mircea GUINA, An analysis of Hall mobility in as-grown and annealed n- and p-type modulation doped GaInNAs/GaAs quantum wells,, International Conference on Superlattices, Nanostructures, and Nanodevices, Dresden, Almanya, Temmuz, B31. M. GUNES, O. DONMEZ, A. EROL, M.C. ARIKAN Optical and electrical properties of InN/GaN and GaN/InN/GaN heterostructures, Türk Fizik Derneği 29. Uluslararası Fizik Kongresi, September 5-8,2012, Bodrum-Türkiye. B32. Fahrettin SARCAN, Omer DONMEZ, Mustafa GUNES, Ayse EROL, Mehmet Cetin ARIKAN, Janne PUUSTINEN and Mircea GUINA, Investigation of Nitrogen dependent in-plane electron

6 andhole effective masses in GaInNAs/GaAs quantum well,, 17th European Molecular Beam Epitaxy Workshop, Levi, Finlandiya, 10-13, Mart, B.33. Intersolar Europe, Münih, Haziran C. Yazılan uluslararası kitaplar veya kitaplarda bölümler : C1... D. Ulusal hakemli dergilerde yayımlanan makaleler : D1. M. Güneş, Fiber Optik İletişimin Gelişim Süreci, Kullanım Alanları ve Avantajları, Tübitak Bilim ve Teknik Dergisi, Nisan, (2007) E. Ulusal bilimsel toplantılarda sunulan ve bildiri kitaplarında basılan bildiriler: E1. S.Ardali, E. Tiras, M. Gunes and N. Balkan, In rich In x Ga 1-x N: Composition Dependence of Carrier Concentration and Hall Mobility, 5 th Nanoscience and Nanotechnology Conference, June 08-12, 2009, Eskisehir-Türkiye.